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參數資料
| 型號： | BPV11 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Photo Transistor, PHOTO TRANSISTOR DETECTOR, LEAD FREE, PLASTIC PACKAGE-3 |
| 中文描述： | Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm |
| 文件頁數： | 1/5頁 |
| 文件大小： | 106K |
| 代理商： | BPV11 |
BPV11
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
1
Document Number: 81504
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon NPN Phototransistor
DESCRIPTION
BPV11 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package with base terminal.
It is sensitive to visible and near infrared radiation.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity:
= ± 15°
Base terminal connected
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Detector for industrial electronic circuitry, measurement
and control
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
12785
PRODUCT SUMMARY
COMPONENT
BPV11
I
ca
(mA)
10
(deg)
± 15
λ
0.1
(nm)
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPV11
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 3000 pcs, 3000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Connected with Cu wire,
0.14 mm
2
TEST CONDITION
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
80
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
47 °C
t
≤
5 s, 2 mm from body
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BPV11 | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1.3/4 |
| BPV11_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| BPV11F | 功能描述:光電晶體管 15 Degree 150mW RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPV11F | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1.3/4 |
| BPV11F_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
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