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參數資料
型號: BPW16N
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Phototransistor
中文描述: 硅npn型光電晶體管
文件頁數: 1/5頁
文件大小: 76K
代理商: BPW16N
BPW16N
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81515
Silicon NPN Phototransistor
Description
BPW16N is a silicon NPN epitaxial planar photo-
transistor in a miniature plastic case with flat window.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack-
able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features
Miniature T– flat clear plastic package
Very wide viewing angle
=
±
40
Suitable for 0.1” (2.54 mm) center to center spac-
ing
Suitable for visible and near infrared radiation
Compatible with IR diode CQY36N
94 8638
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
C
C
C
K/W
t
p
/T = 0.5, t
p
T
amb
10 ms
55 C
t
3 s
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相關代理商/技術參數
參數描述
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