
BPW41N
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 23-Aug-11
1
Document Number: 81522
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon PIN Photodiode
DESCRIPTION
BPW41N is a PIN photodiode with high speed and high
radiant sensitivity in a black, side view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
FEATURES
Package type: leaded
Package form: side view
Dimensions (in mm): 5 x 4 x 6.8
Radiant sensitive area (in mm
2
): 7.5
High radiant sensitivity
Daylight blocking filter matched with 940 nm
emitters
Fast response times
Angle of half sensitivity:
= ± 65°
Compliant to RoHS Directive to 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
High speed detector for infrared radiation
Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8480
PRODUCT SUMMARY
COMPONENT
BPW41N
I
ra
(μA)
45
(deg)
± 65
λ
0.5
(nm)
870 to 1050
ORDERING INFORMATION
ORDERING CODE
BPW41N
PACKAGING
Bulk
REMARKS
PACKAGE FORM
Side view
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm
2
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
T
amb
≤
25 °C
t
≤
5 s