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參數資料
| 型號： | BPW85A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Phototransistor Chip Silicon 850nm 2-Pin T-1 Bulk |
| 中文描述： | Photodetector Transistors NPN Phototransistor 70V 100mW 850nm |
| 文件頁數： | 1/6頁 |
| 文件大小： | 106K |
| 代理商： | BPW85A |
BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 23-Aug-11
1
Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPW85 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 3
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity:
= ± 25°
Compliant to RoHS Directive to 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
20815
PRODUCT SUMMARY
COMPONENT
Ica (mA)
(deg)
λ0.1 (nm)
BPW85A
0.8 to 2.5
± 25
450 to 1080
BPW85B
1.5 to 4
± 25
450 to 1080
BPW85C
3 to 8
± 25
450 to 1080
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
BPW85A
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
BPW85B
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
BPW85C
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
5V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp
≤ 10 ms
ICM
100
mA
Power dissipation
Tamb
≤ 55 °C
PV
100
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
≤ 3 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
Connected with Cu wire 0.14 mm2
RthJA
450
K/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BPW85A | 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW85B | 功能描述:光電晶體管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW85B | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW85C | 功能描述:光電晶體管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW85C | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 |
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