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參數資料
型號: BPW96
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Phototransistor(用于檢測的高靈敏度NPN外延平面型光晶體管)
中文描述: 硅npn型光電晶體管(用于檢測的高靈敏度npn型外延平面型光晶體管)
文件頁數: 1/6頁
文件大小: 84K
代理商: BPW96
BPW96
Vishay Telefunken
1 (6)
Rev. 3, 16-Nov-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81532
Silicon NPN Phototransistor
Description
BPW96 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1
( 5 mm) package. Due to its waterclear epoxy the de-
vice is sensitive to visible and near infrared radiation.
The viewing angle of
±
20 makes it insensible to ambi-
ent straylight.
Features
Fast response times
High photo sensitivity
Standard T–1 ( 5 mm) clear plastic package
Angle of half sensitivity
=
±
20
Suitable for visible and near infrared radiation
Selected into sensitivity groups
94 8391
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
70
5
50
100
150
100
–55...+100
260
350
Unit
V
V
mA
mA
mW
C
C
C
K/W
t
p
/T = 0.5, t
p
T
amb
10 ms
47 C
t
3 s
相關PDF資料
PDF描述
BPW96 Silicon NPN Phototransistor
BPW96A Silicon NPN Phototransistor
BPW96B Silicon NPN Phototransistor
BPW96C Silicon NPN Phototransistor
BPW97 Silicon PIN Photodiode(反向電壓60V,寬帶光檢測器應用的PIN光二極管)
相關代理商/技術參數
參數描述
BPW96A 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
BPW96A 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P
BPW96B 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
BPW96B 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P
BPW96C 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
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