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參數(shù)資料
型號: BR34L02FV-W
廠商: Rohm CO.,LTD.
英文描述: 256? bit Electrically Erasable PROM
中文描述: 256?位電可擦除可編程ROM
文件頁數(shù): 1/25頁
文件大小: 529K
代理商: BR34L02FV-W
BR34L02FV-W
Memory ICs
256
×
8 bit Electrically Erasable PROM
(based on Serial Presence Detect)
BR34L02FV-W
The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area,
developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is
a memory IC that reads ID in order for the Plug & Play feature to operate.
I
2
C BUS is a registered trademark of Philips.
z
Applications
General purpose
z
Features
1) 256k registers
×
8 bits serial architecture
2) Single power supply (1.8V to 5.5V)
3) Two wire serial interface
4) Page Write Function (16byte)
5) Write Protect Mode
Write protect 1 (Onetime Rom)
: 00h to 7Fh
Write protect 2 (Hardwire WP PIN)
: 00h to FFh
6) Low Power consumption
Write (5V)
: 1.2mA (Typ.)
Read (5V)
: 0.2mA (Typ.)
Standby (5V)
: 0.1
μ
A (Typ.)
7) DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low V
CC
8) Small package - - - - - - SSOP-B8 pin
9) High reliability fine pattern CMOS technology
10) Endurance : 1,000,000 erase/write cycles
11) Data retention : 40years
12) Filtered inputs in SCL
SDA for noise suppression
13) Initial data FFh in all address
z
Absolute maximum ratings
(Ta=25
°
C)
Rev.A
1/24
Parameter
Symbol
Limits
Unit
Supply voltage
0.3 to
+
6.5
V
Power dissipation
mW
Storage temperature
65 to
+
125
°
C
Operating temperature
°
C
Terminal voltage
V
40 to
+
85
V
CC
0.3 to V
CC
+
0.3
Pd
Tstg
Topr
1
300(SSOP-B8)
1 Reduced by 3.0mW for each increase in Ta of 1
°
C over 25
°
C.
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參數(shù)描述
BR34L02FV-W_09 制造商:ROHM 制造商全稱:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory
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