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參數資料
| 型號： | BR5010 |
| 廠商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| 中文描述： | 技術規格單相硅橋式整流器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 430K |
| 代理商： | BR5010 |
TECHNICAL SPECIFICATION
S OF
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 50 Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
C ambient temperature unless otherwise specified.
THRU
BR5010
BR-25
RECTIFIER SPECIALISTS
R
DC COMPONENTS CO., LTD.
BR5005
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
SYMBOL
V
RRM
V
DC
I
O
I
FSM
V
RMS
Volts
Volts
Amps
50
400
UNITS
Maximum Average Forward Rectified Output Current at Tc = 55
o
C
50
200
400
100
600
800
1000
35
140
280
70
420
560
700
50
200
400
100
600
800
1000
Volts
Amps
DC Blocking Voltage per element
I
2
t Rating for Fusing (t<8.3ms)
V
F
I
R
1.1
500
uAmps
Maximum DC Reverse Current at Rated
Maximum Forward Voltage Drop per element at 25A DC
Volts
10
Operating and Storage Temperature Range
T
J,
T
STG
-55 to + 175
0
C
NOTES : 1.
Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Case per leg.
I
2
t
664
A
2
Sec
Typical Junction Capacitance ( Note1)
C
J
300
pF
Typical Thermal Resistance (Note 2)
R
θ
JC
2.0
0
C
/W
BR5005
BR501
BR502
BR504
BR506
BR508
BR5010
@T
A
= 25
o
C
@T
A
= 100
o
C
TYP
METAL HEAT SINK
FEATURES
* Plastic case with heatsink for Maximum Heat Dissipation
* Surge overload ratings-400 Amperes
* Low forward voltage drop
* Case: Molded plastic with heatsink
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Plated .25"(6.35mm) Faston lugs, Solderable per
MIL-STD-202E, Method 208 guaranteed
* Polarity: As marked
* Mounting position: Any
* Weight: 30 grams
MECHANICAL DATA
Dimensions in inches and (millimeters)
256
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BR5010-G | 功能描述:橋式整流器 DIODE RECT BRIDGE 50A 1000V RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| BR5010L-G | 功能描述:橋式整流器 VR=1000V IAV=50A RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| BR5010W | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| BR5010W-G | 功能描述:橋式整流器 DIODE RECT BRIDGE 25A 1000V RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| BR5016W | 制造商:Microsemi Corporation 功能描述:BRIDGE RECTIFIER |
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