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參數(shù)資料
型號: BR93LC56RF
廠商: Rohm CO.,LTD.
英文描述: 2,048-Bit Serial Electrically Erasable PROM
中文描述: 2,048位串行電可擦除可編程ROM
文件頁數(shù): 1/12頁
文件大小: 127K
代理商: BR93LC56RF
1
Memory ICs
2,048-Bit Serial Electrically Erasable PROM
BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV
Features
Low power CMOS technology
128
×
16 bit configuration
2.7V to 5.5V operation
Low power dissipation
– 3mA (max.) active current: 5V
– 5
μ
A (max.) standby current: 5V
Auto increment for efficient data bump
Automatic erase-before-write
Hardware and software write protection
– Default to write-disabled state at power up
– Software instructions for write-enable / disable
– Vcc lock out inadvertent write protection
8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages
Device status signal during write cycle
TTL compatible Input / Output
100,000 ERASE / write cycles
10 years Data Retention
Pin assignments
Pin descriptions
Pin
name
1
2
3
4
8
7
6
5
CS
SK
DI
DO
V
CC
N.C.
N.C.
GND
BR93LC56 /
BR93LC56RF
1
2
3
4
8
7
6
5
N.C.
V
CC
CS
SK
N.C.
GND
DO
DI
BR93LC56F /
BR93LC56FV
CS
SK
DI
DO
GND
N.C.
N.C.
V
CC
Function
Chip select input
Serial clock input
Start bit, operating code, address, and serial
data input
Serial data output, READY / BUSY internal
status display output
Ground
Not connected
Not connected
Power supply
Overview
The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically.
Each is configured of 128 words
×
16 bits (2,048 bits), and each word can be accessed individually and data read
from it and written to it.
Operation control is performed using five types of commands. The commands, addresses, and data are input
through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or
BUSY) can be output from the DO pin.
The only difference between the BR93LC56 / F / RF / FV is the write disable voltage and its accompanying write
enable voltage. All other functions and characteristics are the same.
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