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參數(shù)資料
| 型號(hào)： | BS807 |
| 廠商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |
| 中文描述： | N溝道增強(qiáng)型DMOS晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 63K |
| 代理商： | BS807 |
D
S
11301 Rev. D-3
1 of 3
BS807
BS807
N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
High Breakdown Voltage
High Input Impedance
Fast Switching Speed
Specially Suited for Telephone Subsets
Ideal for Automated Surface Mount Assembly
Notes:
1. Device mounted on ceramic substrate 0.7mm x 2.5cm
2
area.
2. Pulse test: Pulse width = 80μs, duty cycle = 1%.
Characteristic
Symbol
I
F
Value
0.3
Unit
A
Max Forward Current (continuous)
Forward Voltage Drop (typ)
@ V
GS
= 0, I
F
= 0.3A, T
j
= 25°C
V
F
0.85
V
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
DSS
V
DGS
V
GS
I
D
P
d
T
j
, T
STG
Value
200
200
±20
100
310
-55 to +150
Unit
V
V
V
mA
mW
°C
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed) (Note 2)
Drain Current (continuous)
Power Dissipation @ T
C
= 50°C (Note 1)
Operating and Storage Temperature Range
Case: SOT-23, Plastic
Terminals: Solderable per
MIL-STD-202 Method 208
Pin Connection: See Diagram
Marking: S07
Weight: 0.008 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.37
0.51
1.19
1.40
2.10
2.50
0.89
1.05
0.45
0.61
1.78
2.05
2.65
3.05
0.013
0.15
0.89
1.10
0.45
0.61
0.076
0.178
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS808B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:● 驗(yàn)證觸控按鍵之感度及反應(yīng)速度。 ● 決定感應(yīng)PAD 直接接觸的外殼材料之厚度。 ● 決定感應(yīng)PAD 之大小。 ● 測(cè)試觸控IC 之規(guī)格特性。 ● 提供客戶觸控相關(guān)之PCB Layout 參考。 ● 提供客戶演示及評(píng)估。 |
| BS808C | 制造商:HOLTEK 制造商全稱:Holtek Semiconductor Inc 功能描述:Touch Key |
| BS809 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:DMOS Transistors (N-Channel) |
| BS80RUNS | 制造商:Brady Corporation 功能描述: |
| BS817 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |
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