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參數資料
| 型號： | BSH106/T3 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-88, 6 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 110K |
| 代理商： | BSH106/T3 |
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH106
FEATURES
SYMBOL
QUICK REFERENCE DATA
Very low threshold voltage
Fast switching
Logic level compatible
Subminiature surface mount
package
V
DS
= 20 V
I
D
= 1.05 A
R
DS(ON)
≤
250 m
(V
GS
= 2.5 V)
V
GS(TO)
≥
0.4 V
GENERAL DESCRIPTION
PINNING
SOT363
N-channel, enhancement mode,
logic
level,
field-effect
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
PIN
DESCRIPTION
power
1,2,5,6 drain
3
gate
4
source
The BSH106 is supplied in the
SOT363
subminiature
mounting package.
surface
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
V
GS
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
20
20
±
8
1.05
0.67
4.2
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
C
R
GS
= 20 k
T
a
= 25 C
T
a
= 100 C
T
a
= 25 C
T
a
= 25 C
T
a
= 100 C
I
DM
P
tot
Drain current (pulse peak value)
Total power dissipation
T
stg
, T
j
Storage & operating temperature
THERMAL RESISTANCES
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
TYP.
300
MAX.
-
UNIT
K/W
d
g
s
1
3
5
Top view
2
4
6
August 1998
1
Rev 1.000
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