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參數資料
型號: BSO612CV
廠商: Infineon Technologies
文件頁數: 1/5頁
文件大小: 0K
描述: MOSFET COMPL N+P 60V 2A 8-SOIC
產品變化通告: Product Discontinuation 22/Feb/2008
標準包裝: 1
系列: SIPMOS®
FET 型: N 和 P 溝道
FET 特點: 標準
漏極至源極電壓(Vdss): 60V
電流 - 連續漏極(Id) @ 25° C: 3A,2A
開態Rds(最大)@ Id, Vgs @ 25° C: 120 毫歐 @ 3A,10V
Id 時的 Vgs(th)(最大): 4V @ 20µA
閘電荷(Qg) @ Vgs: 15.5nC @ 10V
輸入電容 (Ciss) @ Vds: 340pF @ 25V
功率 - 最大: 2W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: P-DSO-8
包裝: 剪切帶 (CT)
其它名稱: BSO612CVINCT
1
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
DESCRIPTION
FEATURES
s Differential PECL data and clock inputs
s 48mA sink, 15mA source TTL outputs
s Single +5V power supply
s Multiple power and ground pins to minimize noise
s Specified within-device skew
s VBB output for single-ended use
s Fully compatible with MC10H/100H607
s Available in 28-pin PLCC package
The SY10/100H607 are 6-bit, registered, dual supply
PECL-to-TTL translators. The devices feature differential
PECL inputs for both data and clock. The TTL outputs
feature 48mA sink, 15mA source drive capability for
driving high fanout loads. The asynchronous master reset
control is a PECL level input.
With its differential PECL inputs and TTL outputs, the
H607 device is ideally suited for the receive function of a
HPPI bus-type board-to-board interface application. The
on-chip registers simplify the task of synchronizing the
data between the two boards.
The device is available in either ECL standard:
the
10H device is compatible with 10K logic levels, while the
100H device is compatible with 100K logic levels.
BLOCK DIAGRAM
SY10H607
SY100H607
Rev.: G
Amendment: /0
Issue Date:
March 2006
DQ
R
CLK
Dn
CLK
Qn
MR
VBB
1 OF 6 BITS
Dn
REGISTERED HEX
PECL-TO-TTL
Pin
Function
D0 – D5
True PECL Data Inputs
D0 – D5
Inverted PECL Data Inputs
CLK, CLK
Differential PECL Clock Input
MR
PECL Master Reset Input
Q0 – Q5
TTL Outputs
VCCE
PECL VCC (5.0V)
VCCT
TTL VCC (5.0V)
TGND
TTL Ground
EGND
PECL Ground
VBB
VBB Reference Output (PECL)
PIN NAMES
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相關代理商/技術參數
參數描述
BSO612CV G 功能描述:MOSFET Dual N/P Channel 60 V 3 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSO612CVG 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 2A 8-SOIC
BSO612CVGHUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 2A 8-SOIC
BSO612CVNT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin SO
BSO612CVT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO T/R
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