- 您現在的位置：買賣IC網 > PDF目錄384155 > BSS129 (Vishay Intertechnology,Inc.) N-Channel Depletion-Mode MOSFET Transistor(最大漏源導通電阻20Ω，夾斷電流0.15A的N溝道耗盡型MOSFET晶體管) PDF資料下載
參數資料
| 型號： | BSS129 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Depletion-Mode MOSFET Transistor(最大漏源導通電阻20Ω，夾斷電流0.15A的N溝道耗盡型MOSFET晶體管) |
| 中文描述： | N溝道耗盡型MOSFET晶體管（最大漏源導通電阻20Ω，夾斷電流0.15A的N溝道耗盡型MOSFET的晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 71K |
| 代理商： | BSS129 |
ND2406L/2410L, BSS129
Siliconix
S-52426—Rev. C, 14-Apr-97
1
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
V
(BR)DSV
Min (V)
r
DS(on)
Max ( )
V
GS(off)
(V)
I
D
(A)
ND2406L
240
6
–1.5 to –4.5
0.23
ND2410L
10
–0.5 to –2.5
0.18
BSS129
230
20
–0.7 (min)
0.15
Features
High Breakdown Voltage: 260 V
Normally “On” Low r
DS
Switch: 3.5
Low Input and Output Leakage
Low-Power Drive Requirement
Low Input Capacitance
Benefits
Full-Voltage Operation
Low Offset Voltage
Low Error Voltage
Easily Driven Without Buffer
High-Speed Switching
Applications
Normally “On” Switching Circuits
Current Sources/Limiters
Power Supply, Converter Circuits
Solid-State Relays
Telecom Switches
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
TO-92-18CD
(TO-18 Lead Form)
Top View
S
G
D
1
2
3
ND2406L
ND2410L
BSS129
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
ND2406L
ND2410L
BSS129
Unit
Drain-Source Voltage
V
DS
240
240
230
V
Gate-Source Voltage
V
GS
30
30
20
Continuous Drain Current (T
J
= 150 C)
=
I
D
0.23
0.18
0.15
=
0.14
0.12
A
Pulsed Drain Current
a
I
DM
0.9
0.9
0.6
Power Dissipation
=
P
D
0.8
0.8
1.0
W
=
0.32
0.32
0.4
Maximum Junction-to-Ambient
R
thJA
156
156
125
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198.
Applications information may also be obtained via FaxBack, request document #70612.
相關PDF資料 |
PDF描述 |
|---|---|
| BSS69-L2 | SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |
| BSS69R-L6 | SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |
| BSS70-L3 | SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |
| BSS70R-L7 | SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |
| BSS79B-CE | SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BSS129Q62702-S15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET TO 92 E LINE TO 237 |
| BSS-12S2R5A | 制造商:Bellnix Co Ltd 功能描述:Bulk |
| BSS131 | 制造商:Infineon Technologies AG 功能描述:MOSFET N SOT-23 制造商:Infineon Technologies AG 功能描述:MOSFET, N, SOT-23 制造商:Infineon Technologies AG 功能描述:N CH MOSFET, 240V, 100mA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V ;RoHS Compliant: Yes 制造商:Infineon Technologies AG 功能描述:N-channel MOSFET,BSS131 0.1A 240V |
| BSS131 H6327 | 功能描述:MOSFET CHIPLIEFERUNGEN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSS131 L6327 | 功能描述:MOSFET N-CH 240V 0.1 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。