- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385193 > BSS138DW (Diodes Inc.) DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | BSS138DW |
| 廠商： | Diodes Inc. |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 雙N溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 58K |
| 代理商： | BSS138DW |
DS30203 Rev. B-2
1 of 1
BSS138DW
BSS138DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
BSS138DW
Units
Drain-Source Voltage
V
DSS
50
V
Drain-Gate Voltage (Note 3)
V
DGR
50
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 1)
Continuous
I
D
200
mA
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KXX: Product marking code
YY: Date code
Marking Code: K38
Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
L
F
D
B C
H
K
KXX YY
K
G
1
S
1
S
2
G
2
D
1
D
2
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS(Note 2)
Drain-Source Breakdown Voltage
BV
DSS
50
75
V
V
GS
= 0V, I
D
= 250 A
V
DS
= 50V, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
0.5
μA
Gate-Body Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
0.5
1.2
1.5
V
V
DS
= V
GS
, I
D
=-250 A
V
GS
= 10V, I
D
= 0.22A
Static Drain-Source On-Resistance
R
DS (ON)
1.4
3.5
Forward Transconductance
g
FS
100
mS
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50
pF
V
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
8.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
20
ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50
Turn-Off Delay Time
t
D(OFF)
20
ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300 s, duty cycle
3. R
GS
20K
2
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
相關PDF資料 |
PDF描述 |
|---|---|
| BSS138PW | 60 V, 360 mA N-channel Trench MOSFET |
| BSS138W-7 | RECTIFIER BRIDGE 8A 50V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE |
| BSS138W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS138 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| BSS138 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BSS138DW_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS138DW_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS138DW7 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| BSS138DW-7 | 功能描述:MOSFET 50V 200mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSS138DW7F | 制造商:Diodes Incorporated 功能描述: 制造商:ON Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。