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參數(shù)資料
型號: BSS74S
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 晶體管|晶體管|進步黨| 200伏五(巴西)總裁| 100mA的一(c)|到18
文件頁數(shù): 1/1頁
文件大小: 11K
代理商: BSS74S
BSS74CSM
Bipolar PNP Device.
V
CEO
= 200V
I
C
= 0.5A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
200
V
I
C(CONT)
0.5
A
h
FE
@ 10/30m (V
CE
/ I
C
)
35
150
-
f
t
50M
Hz
P
D
0.4
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
2-Aug-02
Bipolar PNP Device in a
Hermetically sealed LCC1
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
(
0
(
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
(0.31
rad.
A =
3
PINOUTS
1 – Base
2 – Emitter
3 - Collector
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BSS74 HIGH VOLTAGE PNP SILICON TRANSISTOR
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BSS75 Transient Voltage Suppressor Diodes
BSS75S TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-18
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