
DS30380 Rev. 4 - 2
1 of 5
BSS8402DW
www.diodes.com
Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
SPICE MODELS: BSS8402DW
Features
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Also Available in Lead Free Version
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
1.0M
V
DGR
60
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layoutCase: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 5
Terminal Connections: See Diagram
Marking: KNP (See Page 5)
Weight: 0.008 grams (approx.)
Mechanical Data
A
M
J
L
D
B C
H
K
G
F
D
2
S
2
G
2
D
1
G
1
S
1
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
SOT-363
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
0.90
1.00
0.25
0.40
0.10
0.25
0
8°
All Dimensions in mm
TOP VIEW
Maximum Ratings N-CHANNEL - Q
1
, 2N7002 Section
@ T
A
= 25 C unless otherwise specified
Maximum Ratings - Total Device
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Value
Units
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Maximum Ratings P-CHANNEL - Q
2
, BSS84 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-50
V
Drain-Gate Voltage R
GS
20K
V
DGR
-50
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 1)
Continuous
I
D
-130
mA
T
C
U
D
O
R
P
W
E
N