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參數資料
| 型號： | BSS92 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-200V，夾斷電流-0.15A的P溝道增強型MOSFET晶體管) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓，為200V，夾斷電流，0.15A的P溝道增強型MOSFET的晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | BSS92 |
VP2020L, BSS92
Vishay Siliconix
Document Number: 70210
S-00199—Rev. D, 21-Feb-00
www.Vishay Siliconix.com FaxBack
408-970-5600
11-1
P-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VP2020L
–200
20 @ V
GS
= –4.5 V
20 @ V
GS
= –10 V
–0.8 to –2.5
–0.12
BSS92
–200
–0.8 to –2.8
–0.15
High-Side Switching
Secondary Breakdown Free: –220 V
Low On-Resistance: 11.5
Low-Power/Voltage Driven
Excellent Thermal Stability
Ease in Driving Switches
Full-Voltage Operation
Low Offset Voltage
Easily Driven Without Buffer
No High-Temperature
“Run-Away”
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
Power Supply, Converters
Motor Control
Switches
TO-92-18CD
(TO-18 Lead Form)
Top View
S
G
D
1
2
3
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
BSS92
VP2020L
Parameter
Symbol
VP2020L
BSS92
Unit
Drain-Source Voltage
V
DS
V
GS
–200
–200
V
Gate-Source Voltage
20
20
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
T
A
= 100 C
I
D
–0.12
–0.15
A
–0.08
–0.09
Pulsed Drain Current
a
I
DM
–0.48
–0.6
Power Dissipation
T
A
= 25 C
T
A
= 100 C
P
D
0.8
1.0
W
0.32
0.4
Maximum Junction-to-Ambient
R
thJA
T
J
, T
stg
156
125
C/W
Operating Junction and Storage Temperature Range
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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