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參數資料
| 型號： | BT137S-500E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | DIODE ZENER TRIPLE ISOLATED 200mW 16.2Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-363 3K/REEL |
| 中文描述： | 500 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252 |
| 封裝： | PLASTIC, SOT-428, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BT137S-500E |
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
envelope,
suitable
mounting,
intended
applications
requiring
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications include motor control,
industrial
and
domestic
heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
for
surface
use
high
in
BT137S
(or BT137M)
-
BT137S
(or BT137M)
-
BT137S
(or BT137M)
-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
V
DRM
V
Typical
I
T(RMS)
I
TSM
8
65
8
65
8
A
A
lighting,
65
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
102 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
8
A
-
-
-
65
71
21
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
1
2
3
tab
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
October 1997
1
Rev 1.200
相關PDF資料 |
PDF描述 |
|---|---|
| BT137S-500F | DIODE ZENER SINGLE 200mW 16Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-323 3K/REEL |
| BT137S-500G | Triacs |
| BT137S-800 | DIODE ZENER SINGLE 300mW 20Vz 5mA-Izt 0.06 0.1uA-Ir 14 SOT-23 3K/REEL |
| BT137M-600D | Octal Buffers and Line Drivers with 3-State Outputs 20-LCCC -55 to 125 |
| BT137M-600E | Octal Buffers and Line Drivers with 3-State Outputs 20-CDIP -55 to 125 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BT137S-500F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT137S-500G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT137S-600 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT137S-600 /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT137S-600,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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