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參數(shù)資料
| 型號： | BT139-600H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs high noise immunity |
| 中文描述： | 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 45K |
| 代理商： | BT139-600H |
Philips Semiconductors
Product specification
Triacs
high noise immunity
BT139 series H
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
envelope,
intended
applications requiring
immunity
in
addition
bidirectional
blocking
capability
and
performance.
Typical
include
motor
control,
lighting, heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
use
in
high noise
to
voltage
cycling
applications
industrial
BT139-
500H
500
600H
600
800H
800
high,
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
thermal
I
T(RMS)
I
TSM
16
140
16
140
16
140
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
99 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
16
A
-
-
-
140
150
98
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT139_SERIES | Triacs |
| BT139-500 | Triacs |
| BT139-500F | Triacs |
| BT139-500G | Triacs |
| BT139-600F | Triacs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT139-60DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:4Q Triac High blocking voltage capability |
| BT139-700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
| BT139-700E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
| BT139-700G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
| BT139-700H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
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