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參數資料
| 型號： | BT139B800E |
| 英文描述： | TRIAC|800V V(DRM)|16A I(T)RMS|SOT-404 |
| 中文描述： | 可控硅| 800V的五（DRM）的| 16A條口（T）的有效值|采用SOT - 404 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 39K |
| 代理商： | BT139B800E |
Philips Semiconductors
Product specification
Triacs
BT139 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated triacs in a plastic envelope,
intendedforuseinapplicationsrequiring
high bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications
include
industrial and domestic lighting, heating
and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BT139-
BT139-
BT139-
600
600F
800
800F
800G
800
Typical
control,
motor
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600
V
I
T(RMS)
I
TSM
16
140
16
140
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
600
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
99 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
16
A
-
-
-
140
150
98
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
April 2003
1
Rev 1.500
相關PDF資料 |
PDF描述 |
|---|---|
| BT139_SERIES_E | Triacs sensitive gate |
| BT139F500H | Transient Voltage Suppressor Diodes |
| BT139F600 | Transient Voltage Suppressor Diodes |
| BT139F600E | Transient Voltage Suppressor Diodes |
| BT139F600H | Transient Voltage Suppressor Diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BT139B-800E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs sensitive gate |
| BT139B-800E /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT139B-800E,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT139B-800F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT139B-800F /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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