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參數(shù)資料
| 型號： | BT145 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Thyristors |
| 中文描述： | 晶閘管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 40K |
| 代理商： | BT145 |
Philips Semiconductors
Product specification
Thyristors
BT145B series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic
envelope,
suitable
mounting,
intended
applications
requiring
bidirectional
blocking
capability and high thermal cycling
performance.
Typical
include motor control, industrial and
domestic lighting, heating and static
switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
for
surface
use
high
voltage
in
BT145B-
500R
500
600R
600
800R
800
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
16
25
300
16
25
300
16
25
300
A
A
A
applications
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
mb
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
500
1
600
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
800
V
half sine wave; T
≤
101 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 50 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
-
16
25
A
A
-
-
-
-
300
330
450
200
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
5
5
5
A
V
V
W
W
C
C
20
0.5
150
125
over any 20 ms period
-40
-
1
3
mb
2
a
k
g
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
May 1997
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT145-500R | Thyristors |
| BT145-600R | Thyristors |
| BT145-800R | Thyristors |
| BT145SERIES | Transient Voltage Suppressor Diodes |
| BT148_SERIES | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT145-500R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT145-600R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT145-800R | 制造商:NXP Semiconductors 功能描述:Thyristor SCR 800V 330A 3-Pin(3+Tab) TO-220AB |
| BT145-800R,127 | 功能描述:SCR 25A 800V RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT145-800RTQ | 功能描述:BT145-800RTQ SIL3P STANDARD 制造商:ween semiconductors 系列:- 包裝:散裝 零件狀態(tài):在售 電壓 - 斷態(tài):800V 電壓 - 柵極觸發(fā)（Vgt）（最大值）:1V 電流 - 柵極觸發(fā)（Igt）（最大值）:10mA 電壓 - 通態(tài)（Vtm）（最大值）:1.5V 電流 - 通態(tài)（It（AV））（最大值）:16A 電流 - 通態(tài)（It（RMS））（最大值）:25A 電流 - 保持（Ih）（最大值）:60mA 電流 - 斷態(tài)（最大值）:2mA 電流 - 不重復(fù)浪涌 50，60Hz（Itsm）:300A，330A SCR 類型:標(biāo)準(zhǔn)恢復(fù)型 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220AB 標(biāo)準(zhǔn)包裝:1,000 |
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