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參數(shù)資料
| 型號： | BT148WSERIES |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶閘管邏輯電平 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 53K |
| 代理商： | BT148WSERIES |
Philips Semiconductors
Product specification
Thyristors
logic level
BT148W series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
thyristors
suitable
intended for use in general purpose
switching
and
applications.
These
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
passivated,
in
for
sensitive
plastic
surface
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
a
envelope
mounting,
BT148W-
400R
400
500R
500
600R
600
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
phase
control
devices
are
0.6
1
10
0.6
1
10
0.6
1
10
A
A
A
logic
integrated
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-400R -500R -600R
400
1
500
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
600
1
V
half sine wave; T
≤
112 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 4 A; I
= 200 mA;
dI
G
/dt = 200 mA/
μ
s
-
-
0.6
1
A
A
-
-
-
-
10
11
0.5
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
1
5
5
A
V
V
W
W
C
C
1.2
0.12
150
125
2
over any 20 ms period
-40
-
a
k
g
4
1
2
3
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
2
Note: Operation above 110C may require the use of a gate to cathode resistor of 1k
or less.
October 1997
1
Rev 1.300
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| BT150_SERIES | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT149 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level |
| BT149_SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors logic level |
| BT149B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level |
| BT149B AMO | 功能描述:SCR AMMORA SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT149B,126 | 功能描述:SCR AMMORA SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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