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參數資料
| 型號： | BT150S-500R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Thyristors logic level |
| 中文描述： | 4 A, 500 V, SCR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 49K |
| 代理商： | BT150S-500R |
Philips Semiconductors
Product specification
Thyristors
logic level
BT150S series
BT150M series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
thyristors
suitable
intended for use in general purpose
switching
and
applications.
These
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
passivated,
in
for
sensitive
plastic
surface
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
a
envelope,
mounting,
BT150S
(or BT150M)
-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R
500
600R
600
800R
800
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
V
phase
control
devices
are
2.5
4
35
2.5
4
35
2.5
4
35
A
A
A
logic
integrated
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
cathode
gate
2
anode
anode
3
gate
cathode
tab
anode
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
500
1
600
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
800
V
half sine wave; T
≤
111 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 10 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
2.5
4
A
A
-
-
-
-
35
38
6.1
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
2
5
5
5
A
V
V
W
W
C
C
over any 20 ms period
0.5
150
125
2
-40
-
1
2
3
tab
a
k
g
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
2
Note: Operation above 110C may require the use of a gate to cathode resistor of 1k
or less.
October 1997
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BT150S-800R | Thyristors logic level |
| BT150MSERIES | Transient Voltage Suppressor Diodes |
| BT150SSERIES | Transient Voltage Suppressor Diodes |
| BT150M-600R | Thyristors logic level |
| BT150M-800R | Thyristors logic level |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BT150S-600R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level |
| BT150S-600R /T3 | 功能描述:SCR TAPE13 SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT150S-600R,118 | 功能描述:SCR TAPE13 SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT150S-800R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level |
| BT150SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors logic level |
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