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參數資料
| 型號： | BT151-500 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Thyristors |
| 中文描述： | 晶閘管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 43K |
| 代理商： | BT151-500 |
Philips Semiconductors
Product specification
Thyristors
BT151U series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
bidirectional
blocking
capability and high thermal cycling
performance. Typical applications
include motor control, industrial
and domestic lighting, heating and
static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
high
BT151U-
500C
500
650C
650
800C
800
voltage
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state
current
V
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
PINNING - SOT533, (I-PAK)
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
NUMBER
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500C -650C -800C
500
1
650
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
800
V
half sine wave; T
≤
104 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
7.5
12
A
A
-
-
-
-
100
110
50
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Junction temperature
A
2
s
A/
μ
s
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
2
5
5
A
V
W
W
C
C
over any 20 ms period
0.5
150
125
-40
-
1
Top view
MBK915
2
3
a
k
g
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
April 2004
1
Rev 1.000
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| BT157-1500R | FAST GATE TURN-OFF THYRISTORS |
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| BT157-750 | FAST GATE TURN-OFF THYRISTORS |
| BT157-800 | FAST GATE TURN-OFF THYRISTORS |
| BT157 | FAST GATE TURN-OFF THYRISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BT151-500C | 功能描述:SCR THYRISTOR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151-500C,127 | 功能描述:SCR THYRISTOR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151-500C127 | 制造商:NXP Semiconductors 功能描述:Thyristor |
| BT151-500L | 功能描述:SCR RAIL-THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151-500L,127 | 功能描述:SCR RAIL-THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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