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參數(shù)資料
| 型號： | BT151B-800R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Thyristors |
| 中文描述： | 12 A, 800 V, SCR |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 47K |
| 代理商： | BT151B-800R |
Philips Semiconductors
Product specification
Thyristors
BT151B series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic
envelope,
suitable
mounting,
intended
applications
requiring
bidirectional
blocking
capability and high thermal cycling
performance.
Typical
include motor control, industrial and
domestic lighting, heating and static
switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
for
surface
use
high
voltage
in
BT151B-
500R
500
650R
650
800R
800
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
applications
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
mb
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -650R -800R
500
1
650
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
800
V
half sine wave; T
≤
109 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
7.5
12
A
A
-
-
-
-
100
110
50
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
2
5
5
5
A
V
V
W
W
C
C
over any 20 ms period
0.5
150
125
-40
-
1
3
mb
2
a
k
g
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT151B | Thyristors |
| BT151FSERIES | Thyristors |
| BT151F-500 | Thyristors |
| BT151F-650 | Thyristors |
| BT151F-800 | Thyristors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT151BSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151F-500 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151F-600 | 制造商:SEMIWELL 制造商全稱:SEMIWELL 功能描述:Silicon Controlled Rectifiers |
| BT151F-650 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
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