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參數資料
| 型號： | BT151S_800R |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Thyristors |
| 中文描述： | 晶閘管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 48K |
| 代理商： | BT151S_800R |
Philips Semiconductors
Product specification
Thyristors
BT151S series
BT151M series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic
envelope,
suitable
mounting,
intended
applications
requiring
bidirectional
blocking
capability and high thermal cycling
performance.
Typical
include motor control, industrial and
domestic lighting, heating and static
switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
for
surface
use
high
voltage
in
BT151S
(or BT151M)
-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R
500
650R
650
800R
800
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
V
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
applications
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
cathode
gate
2
anode
anode
3
gate
cathode
tab
anode
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -650R -800R
500
1
650
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
800
V
half sine wave; T
≤
103 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
7.5
12
A
A
-
-
-
-
100
110
50
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
2
5
5
5
A
V
V
W
W
C
C
over any 20 ms period
0.5
150
125
-40
-
1
2
3
tab
a
k
g
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BT151SSERIES | Thyristors |
| BT151X-500 | Thyristors series(可控硅) |
| BT151X-650 | Thyristors series(可控硅) |
| BT151X-800 | Thyristors series(可控硅) |
| BT151X | Thyristors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BT151S-800R /T3 | 功能描述:SCR TAPE13 SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151S-800R,118 | 功能描述:SCR TAPE13 SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151S-800R118 | 制造商:NXP Semiconductors 功能描述:THYRISTOR 800V 12A SOT428 |
| BT151SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors |
| BT151SSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
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