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參數資料
| 型號： | BT168BW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Thyristors logic level for RCD/ GFI/ LCCB applications(應用于RCD/ GFI/ LCCB的可控硅邏輯電平) |
| 中文描述： | 1 A, 200 V, SCR |
| 封裝： | PLASTIC, SOT-223, 4 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 52K |
| 代理商： | BT168BW |
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB applications
BT168W series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
thyristors
suitable
intended for use in Residual Current
Devices/ Ground Fault Interrupters/
Leakage Current Circuit Breakers
(RCD/ GFI/ LCCB)
where a minimum I
limit is needed.
These devices may be interfaced
directly
to
microcontrollers,
integrated circuits and other low
power gate trigger circuits.
passivated,
in
for
sensitive
plastic
surface
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
MAX. UNIT
a
envelope
mounting,
BT168
BW
200
DW
400
EW
500
GW
600
V
DRM
,
V
RRM
I
T(AV)
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
V
0.6
0.6
0.6
0.6
A
applications
I
T(RMS)
I
TSM
1
8
1
8
1
8
1
8
A
A
logic
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
B
D
E
G
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
-
200
1
400
1
500
1
600
1
V
half sine wave;
T
≤
112 C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
= 25 C prior to surge
t = 10 ms
I
TM
= 2 A; I
= 10 mA;
dI
G
/dt = 100 mA/
μ
s
-
0.63
A
I
T(RMS)
I
TSM
RMS on-state current
Non-repetitive peak
on-state current
-
-
-
1
8
9
A
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
0.32
50
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
1
5
5
2
A
V
V
W
W
C
C
over any 20 ms period
0.1
150
125
-40
-
a
k
g
4
1
2
3
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BT168EW | Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168W | Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168WSERIES | Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168DW | Thyristors logic level for RCD/ GFI/ LCCB applications(應用于RCD/ GFI/ LCCB的可控硅邏輯電平) |
| BT168B | Thyristors logic level for RCD/ GFI/ LCCB applications(應用于RCD/ GFI/ LCCB的可控硅邏輯電平) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BT168D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168DW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168E | 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT168E,112 | 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT168EW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
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