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參數資料
| 型號： | BT258X_SERIES |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶閘管邏輯電平 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 48K |
| 代理商： | BT258X_SERIES |
Philips Semiconductors
Product specification
Thyristors
logic level
BT258X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate thyristors
in a full pack, plastic envelope,
intended for use in general purpose
switching
and
applications.
These
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BT258X-
500R
500
600R
600
800R
800
phase
control
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
devices
are
5
8
75
5
8
75
5
8
A
A
A
logic
integrated
75
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
500
1
600
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
800
V
half sine wave; T
≤
90 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 10 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
5
8
A
A
-
-
-
-
75
82
28
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
2
5
5
A
V
W
W
C
C
over any 20 ms period
0.5
150
125
2
-40
-
a
k
g
1 2 3
case
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
2
Note: Operation above 110C may require the use of a gate to cathode resistor of 1k
or less.
October 2002
1
Rev 2.000
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