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參數(shù)資料
| 型號(hào)： | BTA06GP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Triacs(雙向可控硅) |
| 中文描述： | 雙向可控硅（雙向可控硅） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 59K |
| 代理商： | BTA06GP |
BTA06 GP
March 1995
TRIACS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
°
conduction angle)
Tc = 105
°
C
6
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
tp = 8.3 ms
105
A
tp = 10 ms
100
I2t
I2t value
tp = 10 ms
50
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG= 500mA
diG/dt = 1A/
μ
s
Repetitive
F = 50 Hz
10
A/
μ
s
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
TO220AB
(Plastic)
A1
A2G
.
LOW I
H
= 13mA max
.
HIGH SURGE CURRENT : I
TSM
= 100A
.
I
GT
SPECIFIED IN FOUR QUADRANTS
.
INSULATINGVOLTAGE= 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
BTA06-
Unit
400 GP
600 GP
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°
C
400
600
V
ABSOLUTE RATINGS
(limiting values)
FEATURES
The BTA06 GP’s use high performance, glass pas-
sivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.
1/4
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