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參數資料
型號: BTA204W-500B
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: PTSE 16C 16#16 SKT RECP
中文描述: 500 V, 1 A, SNUBBERLESS TRIAC
封裝: PLASTIC, SOT-223, 4 PIN
文件頁數: 1/6頁
文件大小: 51K
代理商: BTA204W-500B
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated high commutation triacs in
a plastic envelope suitable for surface
mounting intended for use in circuits
where high static and dynamic dV/dt
and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature withoutthe aid of
a snubber.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA204W- 500B
BTA204W- 500C
600B
600C
600
800B
800C
800
V
DRM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
500
V
I
T(RMS)
I
TSM
1
1
1
A
A
10
10
10
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
108 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A;
I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
1
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
10
11
0.5
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
T1
T2
G
4
1
2
3
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
December 1998
1
Rev 1.000
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