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參數資料
| 型號： | BTA212B-600C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Three quadrant triacs high commutation |
| 中文描述： | 600 V, 12 A, SNUBBERLESS TRIAC, TO-263 |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 22K |
| 代理商： | BTA212B-600C |
Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA212B series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacsinaplasticenvelopesuitablefor
surface mounting intended for use in
circuitswherehighstaticanddynamic
dV/dt and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature, without the aid
of a snubber.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA212B-
500C
500
600C
600
800C
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
I
T(RMS)
I
TSM
12
95
12
95
12
95
A
A
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
≤
99 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
12
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
95
105
45
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
1
3
mb
2
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
October 1997
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| BTA212X-500B | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA212_SERIES_B | Three quadrant triacs high commutation |
| BTA212-500B | TRIAC|500V V(DRM)|12A I(T)RMS|TO-220AB |
| BTA212-600D | TRIAC|600V V(DRM)|12A I(T)RMS|TO-220AB |
| BTA212-600E | Transient Voltage Suppressor Diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BTA212B600D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|12A I(T)RMS|SOT-404 |
| BTA212B-600D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B-600D /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212B-600D,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212B600E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|12A I(T)RMS|SOT-404 |
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