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參數資料
| 型號： | BTB26B |
| 廠商： | 意法半導體 |
| 英文描述： | Standard Triacs(標準雙向可控硅) |
| 中文描述： | 標準雙向（標準雙向可控硅） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 73K |
| 代理商： | BTB26B |
BTA26 A/B
BTB26 B
March 1995
STANDARD TRIACS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
°
conduction angle)
BTA
Tc = 90
°
C
25
A
BTB
Tc = 90
°
C
30
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
tp = 8.3 ms
260
A
tp = 10 ms
250
I2t
I2t value
tp = 10 ms
312.5
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG= 500mA
diG/dt = 1A/
μ
s
Repetitive
F = 50 Hz
10
A/
μ
s
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
TOP 3
(Plastic)
A1
A2
G
.
HIGH SURGE CURRENT CAPABILITY
.
COMMUTATION : (dV/dt)c> 10V/
μ
s
.
BTAFamily :
INSULATINGVOLTAGE= 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
BTA26-...A/B / BTB26-... B
Unit
400
600
700
800
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°
C
400
600
700
800
V
ABSOLUTE RATINGS
(limiting values)
FEATURES
The BTA26 A/B / BTB26 B triac family are high
performanceglass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where high surge current capability is re-
quired. Application such as phase control and
static switching on inductive or resistive load.
1/5
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