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參數資料
| 型號： | BTC4505N3 |
| 廠商： | Comchip Technology Co., Ltd. |
| 英文描述： | High Voltage Transistor (NPN) |
| 中文描述： | 高壓晶體管（NPN）的 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 66K |
| 代理商： | BTC4505N3 |
www.comchiptech.com
COMCHIP
Page 1
BTC4505N3
High Voltage
Transistor (NPN)
Features
High breakdown voltage. (BVceo =400V)
Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA
C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
COLLECTOR
3
1
BASE
2
EMITTER
Limit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
400
400
6
300
0.225
150
-55~+150
V
V
V
mA
W
°
C
°
C
Unit
SOT-23
Dimensions in inches (millimeters)
.037(0.95).037(0.95)
.1
19
(3.
0
)
.110 (2.8)
.0
20
(0.
5
)
.
6
5
)
m
.0
20
(0.
5
)
.0
20
(0.
5
)
Top View
.10
3
(2.6)
.0
86
(2.
2
)
)
.
6
.
4
0
4
2
)
.
2
0
5
.
5
0
)
0
MDS0405003A
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