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參數資料
| 型號： | BTS660-P |
| 元件分類： | TVS-瞬態抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？9mOhm - Vbb（上）\u003d 5V的- 58V -的TO220 - 7 - 3？ |
| 文件頁數： | 1/16頁 |
| 文件大小： | 232K |
| 代理商： | BTS660-P |
PROFET Data Sheet BTS660P
Infineon Technologies AG Page 1 of 16
2001-May-30
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
1
)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of
V
bb
protection
2
)
E
lectro
s
tatic
d
ischarge (
ESD
) protection
Application
Power switch with current sense diagnostic
feedback for up to 48
V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and
discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
Overvoltage
protection
+ Vbb
PROFET
OUT
4 & Tab
1,2,6,7
Load GND
Load
Output
Voltage
detection
RIS
IS
5
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
Rbb
V
IN
1
)
With additional external diode.
2
)
Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limtation
I
L(SC)
Current sense ratio
V
bb(AZ)
V
ON(CL)
V
bb(on)
R
ON
I
L(ISO)
70
62
V
V
V
5.0
...
58
9
m
44
90
A
A
I
L :
I
IS
13 000
TO 220-7SMD
1
7
Standard
1
7
SMD
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BTS660P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 內部開關 系列:PROFET® 標準包裝:1,000 系列:- 類型:高端/低端驅動器 輸入類型:SPI 輸出數:8 導通狀態電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS660PE3180A | 功能描述:電源開關 IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關數量:Single 開關配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時間（最大值）:13 ns 關閉時間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風格:Through Hole 封裝 / 箱體:TO-220F-6 |
| BTS660P-E3180A | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
| BTS660PE3180ANTMA1 | 制造商:Infineon Technologies AG 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD |
| BTS660PE3180AT | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
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