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參數資料
| 型號： | BU2527AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 72K |
| 代理商： | BU2527AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
6.0
1.7
MAX.
1500
800
12
30
45
5.0
-
2.0
UNIT
V
V
A
A
W
V
A
μ
s
T
hs
≤
25 C
I
C
= 6.0 A; I
B
= 1.2 A
I
Csat
= 6.0 A; I
B(end)
= 0.55 A
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
12
30
8
12
200
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
case
1 2 3
b
c
e
1
Turn-off current.
September 1997
1
Rev 2.200
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| BU2527A | Silicon Diffused Power Transistor |
| BU2527DF | Silicon Diffused Power Transistor |
| BU2527DX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU2530AL | Silicon Diffused Power Transistor |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BU2527DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2527DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2530AL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2530AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2532AL | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
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