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參數資料
| 型號： | BU2720DX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 10 A, 825 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 73K |
| 代理商： | BU2720DX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2720DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand V
CES
pulses up
to 1700V.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.5
7.4
MAX.
1700
825
10
25
45
1.0
-
8.5
UNIT
V
V
A
A
W
V
A
μ
s
T
hs
≤
25 C
I
= 5.5 A; I
B
= 1.38 A
f = 16 kHz
I
Csat
= 5.5 A; f = 16kHz
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
10
25
10
14
150
6
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
ESD LIMITING VALUES
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor voltage Human body model (250 pF,
CONDITIONS
MIN.
-
MAX.
10
UNIT
kV
1.5 k
)
case
1 2 3
b
c
e
Rbe
1
Turn-off current.
September 1997
1
Rev 1.300
相關PDF資料 |
PDF描述 |
|---|---|
| BU2722AF | Silicon Diffused Power Transistor |
| BU2722 | Silicon Diffused Power Transistor |
| BU2722AX | Silicon Diffused Power Transistor |
| BU2722DF | Silicon Diffused Power Transistor |
| BU2722DX | TRANSISTOR | BJT | NPN | 825V V(BR)CEO | 10A I(C) | SOT-399 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BU2722 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2722AF | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon Power Transistors |
| BU2722AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2722DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2722DX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 825V V(BR)CEO | 10A I(C) | SOT-399 |
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