- 您現在的位置：買賣IC網 > PDF目錄369552 > BU4508DX (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor(硅擴散功率型晶體管) PDF資料下載
參數資料
| 型號： | BU4508DX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 55K |
| 代理商： | BU4508DX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.0
1.85
300
MAX.
1500
800
8
15
45
3.0
-
2.2
400
UNIT
V
V
A
A
W
V
A
V
ns
T
hs
≤
25 C
I
= 5.0 A; I
B
= 1.25 A
f = 16kHz
I
F
= 5 A
I
Csat
= 5A; f = 16kHz
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
case
1 2 3
b
c
e
Rbe
1
Turn-off current.
February 1999
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| BU4508DZ | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU4508HG | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU4508AF | Silicon Diffused Power Transistor |
| BU4515AF | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU4515AX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BU4508DZ | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
發布緊急采購，3分鐘左右您將得到回復。