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參數資料
| 型號： | BU4515DX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 9 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 23K |
| 代理商： | BU4515DX |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4515DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
6.0
t.b.f
1.7
t.b.f
t.b.f
MAX.
1500
800
9
20
45
3.0
-
-
2.0
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
V
μ
s
μ
s
T
hs
≤
25 C
I
= 5.0 A; I
B
= 1.25 A
f = 16kHz
f = 64kHz
I
F
= 6 A
I
= 6A; f = 16kHz
f = 64kHz
V
F
t
f
Diode forward voltage
Fall time
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
9
20
5
7.5
6
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
case
1 2 3
b
c
e
Rbe
1
Turn-off current.
July 1998
1
Rev 1.000
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