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參數資料
| 型號： | BU4525DW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 14 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, SOT-429, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 23K |
| 代理商： | BU4525DW |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and
p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very
low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
9.0
t.b.f
-
0.4
t.b.f
MAX.
1500
800
14
30
125
3.0
-
-
2.2
0.55
t.b.f
UNIT
V
V
A
A
W
V
A
A
V
μ
s
μ
s
T
hs
≤
25 C
I
= 9.0 A; I
B
= 2.25 A
f = 16 kHz
f = 70 kHz
I
F
= 9.0 A
I
= 9.0 A;f = 16 kHz
f = 70 kHz
V
F
t
f
Diode forward voltage
Fall time
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
14
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
2
3
1
b
c
e
Rbe
1
Turn-off current.
July 1998
1
Rev 1.000
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BU4525DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4528 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Dual monostable multivibrator |
| BU4528B | 功能描述:IC MULTIVIBRATOR MONOSTBLE 16DIP RoHS:是 類別:集成電路 (IC) >> 邏輯 - 多頻振蕩器 系列:4000B 標準包裝:1 系列:4000B 邏輯類型:單穩態 獨立電路:2 施密特觸發器輸入:無 傳輸延遲:100ns 輸出電流高，低:8.8mA，8.8mA 電源電壓:3 V ~ 15 V 工作溫度:-55°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:16-SOIC 包裝:Digi-Reel® 其它名稱:CD4538BCMXDKR |
| BU4528B/BF | 制造商:ROHM 制造商全稱:Rohm 功能描述:Standard LSIs |
| BU4528BF | 制造商:ROHM 制造商全稱:Rohm 功能描述:Dual monostable multivibrator |
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