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參數資料
| 型號： | BU508AW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, SOT-429, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 72K |
| 代理商： | BU508AW |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection
circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
0.7
MAX.
1500
700
8
15
125
1.0
-
-
UNIT
V
V
A
A
W
V
A
μ
s
T
mb
≤
25 C
I
B
= 1.6 A
f = 16 kHz
I
Csat
= 4.5 A; f = 16kHz
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
125
150
150
UNIT
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
2
3
1
b
c
e
July 1998
1
Rev 1.200
相關PDF資料 |
PDF描述 |
|---|---|
| BU508AX | Silicon Diffused Power Transistor |
| BU508DF | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU508DW | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU508DX | Silicon Diffused Power Transistor |
| BU522 | TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 7A I(C) | TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BU508AW | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-249 |
| BU508AW_0708 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage NPN power transistor for standard definition CRT display |
| BU508AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BU508D | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-247 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SOT-93A NP 1500V 8A 125W BCEC |
| BU508D | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-247 |
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