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參數資料
| 型號： | BU508F |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN POWER TRANSISTORS |
| 中文描述： | NPN電源晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 40K |
| 代理商： | BU508F |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN POWER TRANSISTORS
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation upto T
a
=25o C
T
c
=25o C
Storage Temperature Range
Max Operating Junction Temperature
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
UNIT
V
V
V
A
W
T
stg
T
j
oC
oC
THERMAL RESISTANCE
Thermal Resistance Junction - Case
R
th (j-c)
oC/W
ELECTRICAL CHARACTERISTICS (T
C
=25oC unless specified otherwise)
.
DESCRIPTION
Collector Cut off Current
Collector Emitter Sustaining Voltage
Emitter Base Voltage
SYMBOL
I
CES
V
CEO (sus)
*
V
EBO
TEST CONDITIONS
V
CE
=V
CES
, V
BE
=0
I
B
=0, I
C
=100mA
I
E
=10mA, I
C
=0
BU508F, AF
V
EB
=5V, I
C
=0
BU508DF
I
C
=4.5A, V
CE
=5V
I
F
=4.0A
BU508DF
I
C
=4.5A, I
B
=2.0A
BU508AF, DF
I
C
=4.5A, I
B
=2.0A
BU508F
I
C
=4.5A, I
B
=2.0A
MIN
TYP
MAX
1.0
UNIT
mA
V
V
700
5.0
Emitter Cut-off Current
I
EBO
300
mA
DC Current Gain
Diode forward Voltage
h
FE
V
F
2.25
2.0
V
Collector Emitter Saturation Voltage
V
CE(sat) *
1.0
V
5.0
V
Base Emitter Saturation Voltage
V
BE(sat) *
1.5
V
SWITCHING TIME
Storage Time
Fall Time
* Pulse test: Pulse Duration <300
t
s
t
f
I
C
=4.5A,h
FE
=2.5,V
CC
=140V
L
C
=0.9mH, L
B
=3
μ
H
7.0
0.5
μ
s
μ
s
m
s , Duty cycle < 1.5%.
8
15
34
60
- 65 to +150
150
2.08
VALUE
1500
700
5
IS/ISO 9002
Lic# QSC/L- 000019.2
B
C
E
Continental Device India Limited
Data Sheet
Page 1 of 3
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| BU508FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-218 |
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