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參數資料
| 型號： | BU52003GUL-E2 |
| 廠商： | Rohm Semiconductor |
| 文件頁數： | 6/22頁 |
| 文件大小： | 505K |
| 描述： | IC HALL EFFECT SW BIPO VCSP50L1 |
| 特色產品： | ROHM Hall Effect Sensor ICs |
| 標準包裝： | 1 |
| 傳感范圍： | -5.5mT 跳閘，-0.8mT 釋放 |
| 類型： | 單極開關 |
| 電源電壓： | 2.4 V ~ 3.3 V |
| 電流 - 電源： | 9µA |
| 電流 - 輸出（最大）： | ±1mA |
| 輸出類型： | 數字，開路集電極 |
| 特點： | 穩壓電壓 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 4-UFBGA，CSPBGA |
| 供應商設備封裝： | VCSP50L1 |
| 包裝： | 標準包裝 |
| 產品目錄頁面： | 1377 (CN2011-ZH PDF) |
| 其它名稱： | BU52003GUL-E2DKR |
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
Technical Note
6/19
www.rohm.com
2010.08 - Rev.C
?2010 ROHM Co., Ltd. All rights reserved.
BU52013HFV (Unless otherwise specified, V
DD
=1.80V, Ta=25)
Parameter
Symbol
Limits
Unit
Conditions
Min.
Typ.
Max.
Power Supply Voltage
V
DD
1.65
1.80
3.30
V
Operate Point
B
opN
-5.0
-3.0
-
mT
Release Point
B
rpN
-
-2.1
-0.6
mT
Hysteresis
B
hysN
-
0.9
-
mT
Period
T
P
-
50
100
ms
Output High Voltage
V
OH
V
DD
-0.2
-
-
V
B
rpN
<B
;
11
I
OUT
=-0.5mA
Output Low Voltage
V
OL
-
-
0.2
V
B
opN
;
11
I
OUT
=+0.5mA
Supply Current 1
I
DD1(AVG)
-
3.5
5.5
礎
V
DD
=1.8V, Average
Supply Current
During Startup Time 1
I
DD1(EN)
-
2.8
-
mA
V
DD
=1.8V,
During Startup Time Value
Supply Current
During Standby Time 1
I
DD1(DIS)
-
1.8
-
礎
V
DD
=1.8V,
During Standby Time Value
Supply Current 2
I
DD2(AVG)
-
6.5
9
礎
V
DD
=2.7V, Average
Supply Current
During Startup Time 2
I
DD2(EN)
-
4.5
-
mA
V
DD
=2.7V,
During Startup Time Value
Supply Current
During Standby Time 2
I
DD2(DIS)
-
4.0
-
礎
V
DD
=2.7V,
During Standby Time Value
;11. B = Magnetic flux density
1mT=10Gauss
Positive ( + ) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (T
P
) to become definite output.
Radiation hardiness is not designed.
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