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參數資料
| 型號： | BUF405AFI |
| 廠商： | 意法半導體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistors(高壓快速開關NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關晶體管（高壓快速開關npn型功率晶體管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 63K |
| 代理商： | BUF405AFI |
BUF405A
BUF405AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
I
HIGH SWITCHING SPEEDNPN POWER
TRANSISTORS
I
EASY TO DRIVE
I
HIGH VOLTAGEFOR OFF-LINE
APPLICATIONS
I
100 KHz SWITCHING SPEED
I
LOW COST DRIVE CIRCUITS
I
LOW DYNAMICSATURATION
APPLICATIONS:
I
SWITCH MODE POWER SUPPLIES
I
MOTOR DRIVERS
DESCRIPTION
These Easy-to-Drive FASTSWITCH NPN power
transistors
are
specially
reliability industrial and professionalpower driving
applications such us motor drives and off-line
switching power supplies. ETD transistors will
operate using easy drive circuits at up to 100KHz;
this helps to simplify designs and improve
reliability. The superior switching performance
and low crossover losses reduce dissipation and
consequently lowers the equipment operating
temperature.
designed
for
high
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Unit
V
V
V
A
A
A
A
W
o
C
o
C
BUF405A
BUF405AFI
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector-Emitter Voltage (V
BE
= -1.5 V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max Operation Junction Temperature
1000
450
7
7.5
15
3
4.5
80
40
-65 to 150
150
1
2
3
TO-220
ISOWATT220
1
2
3
1/6
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUF405AFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| BUF405AXI | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor BUF405AXI |
| BUF410 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BUF410A | 功能描述:兩極晶體管 - BJT NPN High Volt Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUF410A_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor |
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