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參數資料
| 型號： | BUH515D |
| 廠商： | 意法半導體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關晶體管（高電壓快速開關npn型功率晶體管） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 84K |
| 代理商： | BUH515D |
BUH515D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
SGS-THOMSON PREFERRED SALESTYPE
I
HIGH VOLTAGECAPABILITY
I
U.L.RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734(N))
I
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
I
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The
BUH515D
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
The BUH series is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
is
manufactured
using
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
1500
700
5
8
15
5
8
50
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
1
2
3
ISOWATT218
R Typ. = 12
1/7
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| BUH515FP | High Voltage Fast-Switching NPN Power Transistor(高壓快速開關NPN功率晶體管) |
| BUH515 | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關NPN功率晶體管) |
| BUH517 | CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR |
| BUH615D | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關NPN功率晶體管) |
| BUH715 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUH515FP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-220FP |
| BUH517 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN ISOWATT-218 |
| BUH517 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN ISOWATT-218 |
| BUH517D | 制造商:STMicroelectronics 功能描述:1700V 8A 60W Bce St Micro Transistor NPN |
| BUH51G | 功能描述:兩極晶體管 - BJT 3A 800V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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