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參數資料
| 型號： | BUJ403AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 6 A, 550 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 70K |
| 代理商： | BUJ403AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.15
15.5
170
MAX.
1200
1200
550
6
10
32
1.0
-
300
UNIT
V
V
V
A
A
W
V
T
mb
≤
25 C
I
C
B
= 0.4 A
I
C
= 3 A; V
CE
= 5 V
I
C
= 2.5 A; I
B1
= 0.5 A
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1200
550
1200
6
10
3
5
32
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
1 2 3
case
b
c
e
December 1998
1
Rev 1.200
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| BUJ403BX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJD103AD | 制造商:NXP Semiconductors 功能描述:TRANSISITORNPN400V4ASOT428 制造商:NXP Semiconductors 功能描述:TRANSISITOR,NPN,400V,4A,SOT428 制造商:NXP Semiconductors 功能描述:TRANSISITOR,NPN,400V,4A,SOT428; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:2 ;RoHS Compliant: Yes |
| BUJD103AD,118 | 功能描述:兩極晶體管 - BJT TRANS NPN 700V 4A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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