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參數資料
型號: BUJD203A
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN power transistor with integrated diode
中文描述: 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數: 1/14頁
文件大小: 317K
代理商: BUJD203A
1.
Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
BUJD203A
NPN power transistor with integrated diode
Rev. 02 — 2 December 2010
Product data sheet
Quick reference data
Parameter
collector current
Conditions
see
Figure 1
; see
Figure 2
; DC;
see
Figure 4
see
Figure 3
; T
mb
25 °C
Min
-
Typ
-
Max
4
Unit
A
P
tot
total power
dissipation
collector-emitter
peak voltage
-
-
80
W
V
CESM
V
BE
= 0 V
-
-
850
V
Static characteristics
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 5 V;
see
Figure 11
; T
j
= 25 °C
V
CE
= 5 V; I
C
= 3 A;
T
mb
= 25 °C; see
Figure 11
I
B
= 0 A; L
C
= 25 mH;
I
C
= 10 mA; see
Figure 6
;
see
Figure 7
13
21
32
-
12.5
-
V
CEOsus
collector-emitter
sustaining voltage
400
450
-
V
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相關代理商/技術參數
參數描述
BUJD203A,127 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD203AD 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
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