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參數(shù)資料
| 型號(hào)： | BUK117-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 12 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78B, SEP-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 44K |
| 代理商： | BUK117-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK117-50DL
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in
TOPFET2
technology
assembled in a 3 pin plastic
package.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
D
T
j
R
DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
8
40
150
100
V
A
W
C
m
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
in automotive systems and other
applications.
I
ISL
Input supply current
V
IS
= 5 V
650
μ
A
FEATURES
FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT78B
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
tab
drain
DRAIN
SOURCE
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
POWER
MOSFET
1 2 3
MBL292
Front view
mb
mb
P
D
S
I
TOPFET
May 2001
1
Rev 1.800
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK117-50DL,127 | 功能描述:MOSFET N-CH 50V 12A SOT78B RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān) 系列:TOPFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 類(lèi)型:高端/低端驅(qū)動(dòng)器 輸入類(lèi)型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類(lèi)型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BUK118-50DL | 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK118-50DL,127 | 功能描述:MOSFET BUK118-50DL/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK119-50DL | 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK119-50DL,127 | 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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