欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: BUK148-50DL
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 8A I(D) | TO-220VAR
中文描述: 晶體管| MOSFET的| N溝道| 50V五(巴西)直| 8A條(丁)|對220VAR
文件頁數: 1/6頁
文件大小: 37K
代理商: BUK148-50DL
Philips Semiconductors
Product specification
Logic level TOPFET
BUK148-50DL
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in
TOPFET2
technology
assembled in a 3 pin plastic
package.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
D
T
j
R
DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
8
40
150
100
V
A
W
C
m
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
in automotive systems and other
applications.
I
ISL
Input supply current
V
IS
= 5 V
650
μ
A
FEATURES
FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT226
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
tab
drain
DRAIN
SOURCE
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
POWER
MOSFET
tab
1 2 3
P
D
S
I
TOPFET
May 2001
1
Rev 1.100
相關PDF資料
PDF描述
BUK200-50X_1 PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
BUK200-50X PowerMOS transistor TOPFET high side switch
BUK200-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
BUK201-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
BUK201-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
相關代理商/技術參數
參數描述
BUK148-50DL,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK149-50DL,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK150-50DL,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK1M200-50SDLD 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Quad channel TOPFET
BUK1M200-50SDLD,11 功能描述:MOSFET BUK1M200-50SDLD/SO20/REEL7// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 诸城市| 龙南县| 迭部县| 社会| 慈溪市| 剑川县| 长顺县| 罗定市| 化德县| 温泉县| 沾化县| 呼玛县| 高雄县| 延津县| 巴楚县| 洛阳市| 加查县| 宁波市| 五华县| 应用必备| 榕江县| 三江| 和田市| 孙吴县| 湖州市| 岳阳县| 宁强县| 乌鲁木齐县| 阿坝| 梁河县| 游戏| 昭苏县| 蕉岭县| 黄陵县| 垫江县| 荥经县| 滕州市| 淮北市| 香格里拉县| 蒲城县| 鄂伦春自治旗|