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參數資料
| 型號： | BUK444-200 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 功率金屬氧化物半導體晶體管 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 77K |
| 代理商： | BUK444-200 |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK444
-200A
200
5.3
25
0.4
-200B
200
4.7
25
0.5
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
V
A
W
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
200
200
30
UNIT
V
V
V
-200A
5.3
3.3
21
-200B
4.7
3.0
19
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
25
150
150
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
5
UNIT
K/W
R
th j-a
-
55
-
K/W
1 2 3
case
d
g
s
April 1993
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BUK444-200A | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk |
| BUK444-400B | N-Channel Enhancement MOSFET |
| BUK444-450B | N-Channel Enhancement MOSFET |
| BUK444-500A | N-Channel Enhancement MOSFET |
| BUK444-500B | N-Channel Enhancement MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUK444-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK444-200B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK444-400B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK444-450B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK444-500A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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