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參數(shù)資料
| 型號(hào)： | BUK475-200B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK455-200A/B |
| 中文描述： | 7 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 58K |
| 代理商： | BUK475-200B |
Philips Semiconductors
Product specification
PowerMOS transistor
Isolated version of BUK455-200A/B
BUK475-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic
full-pack
deviceisintendedforuseinSwitched
Mode
Power
Supplies
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
envelope.
The
BUK475
-200A
200
7.6
30
150
0.23
-200B
200
7
30
150
0.28
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
A
W
C
(SMPS),
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
200
200
30
UNIT
V
V
V
-200A
7.6
4.8
30
-200B
7
4.4
28
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
30
150
150
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
4.17
UNIT
K/W
R
th j-a
-
55
-
K/W
1 2 3
case
d
g
s
June 1996
1
Rev 1.200
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