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參數(shù)資料
| 型號： | BUK554-200B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 20 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 89% |
| 中文描述： | 8.2 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 69K |
| 代理商： | BUK554-200B |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK554-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK554
-200A
200
9.2
90
175
0.4
-200B
200
8.2
90
175
0.5
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
V
A
W
C
V
GS
= 5 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
±
V
GSM
Non-repetitive gate-source voltage t
p
≤
50
μ
s
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
-
MAX.
200
200
15
20
UNIT
V
V
V
V
-200A
9.2
6.5
36
-200B
8.2
5.8
33
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
90
175
175
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.67
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
April 1993
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BUK554-60H | PowerMOS transistor Logic level FET |
| BUK555-100 | PowerMOS transistor Logic level FET |
| BUK555-100A | PowerMOS transistor Logic level FET |
| BUK562-100A | PowerMOS transistor Logic level FET |
| BUK562-60A | PowerMOS transistor Logic level FET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK554-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK555-100 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK555-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK555-100A/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR LOGIK MOSFET TO 220 |
| BUK555-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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